R. Beresford

The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

M. A. Sánchez-Garcı́a, E. Calleja, E. Monroy et al. · Journal of Crystal Growth · 1998 · 316 citations

Materials Science, Aluminium Nitride, Electrical Engineering +9

A study of low temperature crystallization of amorphous thin film indium–tin–oxide

David C. Paine, T. Whitson, D. Janiac et al. · Journal of Applied Physics · 1999 · 284 citations

Thin Film Physics, Engineering, Crystal Growth Technology +17

High-mobility amorphous In2O3–10wt%ZnO thin film transistors

Hyo‐Young Yeom, R. Beresford, David C. Paine · Applied Physics Letters · 2006 · 214 citations

Materials Science, Electrical Engineering, Engineering +13

Interband tunneling in polytype GaSb/AlSb/InAs heterostructures

L. F. Luo, R. Beresford, W. I. Wang · Applied Physics Letters · 1989 · 169 citations

Wide-bandgap Semiconductor, Polytype Gasb/alsb/inas Heterostructures, Engineering +11

Photoconductive ultraviolet sensor using Mg-doped GaN on Si(111)

K. S. Stevens, M. Kinniburgh, R. Beresford · Applied Physics Letters · 1995 · 133 citations

Wide-bandgap Semiconductor, Electrical Engineering, Direct Gap Semiconductor +13