R. Beresford - Concepedia

Author

R. Beresford

Brown University ORCID

Also Known As

R Beresford, R. Beresford, R. M. Beresford, Rod Beresford, Roderic Beresford

Publications

2.8K

Citations

H-Index

Concepts

All Affiliations

Brown University Columbia University IBM Research - Thomas J. Watson Research Center Boston College

About

R. Beresford is an author at Brown University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	27	47	2.6K
2	Applied Physics	26	46	2.5K
3	Biomedical Engineering	2	2	96
4	Natural Sciences	1	1	22
5	Chemistry	1	1	22

R. Beresford

Publications

2.6K

Citations

H-Index

Page 1

	Year	Citations
The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1) M. A. Sánchez-Garcı́a, E. Calleja, E. Monroy, Journal of Crystal Growth Materials ScienceAluminium NitrideElectrical EngineeringEngineeringSurface Science	1998	316
A study of low temperature crystallization of amorphous thin film indium–tin–oxide David C. Paine, T. Whitson, D. Janiac, Journal of Applied Physics Thin Film PhysicsEngineeringCrystal Growth TechnologyThin Film Process TechnologySemiconductors	1999	284
High-mobility amorphous In2O3–10wt%ZnO thin film transistors Hyo‐Young Yeom, R. Beresford, David C. Paine Applied Physics Letters Materials ScienceElectrical EngineeringEngineeringOxide ElectronicsOxide Semiconductors	2006	214
Interband tunneling in polytype GaSb/AlSb/InAs heterostructures L. F. Luo, R. Beresford, W. I. Wang Applied Physics Letters Wide-bandgap SemiconductorPolytype Gasb/alsb/inas HeterostructuresEngineeringPhysicsTunneling Microscopy	1989	169
Photoconductive ultraviolet sensor using Mg-doped GaN on Si(111) K. S. Stevens, M. Kinniburgh, R. Beresford Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringDirect Gap SemiconductorV BiasPhysics	1995	133
Microstructure and photoluminescence of GaN grown on Si(111) by plasma-assisted molecular beam epitaxy Akira Ohtani, K. S. Stevens, R. Beresford Applied Physics Letters Materials ScienceSemiconductorsWide-bandgap SemiconductorMosaic DisorderEngineering	1994	105
Microstructure of AlN on Si (111) grown by plasma-assisted molecular beam epitaxy K. S. Stevens, Akira Ohtani, M. Kinniburgh, Applied Physics Letters Materials ScienceAluminium NitrideMaterial AnalysisEngineeringCrystalline Defects	1994	95
Resonant tunneling in AlSb/InAs/AlSb double-barrier heterostructures L. F. Luo, R. Beresford, Wenjia Wang Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPhysics	1988	94
Competition between tensile and compressive stress mechanisms during Volmer-Weber growth of aluminum nitride films Brian W. Sheldon, Ashok Rajamani, Abhinav Bhandari, Journal of Applied Physics Aluminium NitrideEngineeringSevere Plastic DeformationStress EvolutionMolecular Dynamics	2005	80
Nanoheteroepitaxy of GaN on a nanopore array Si surface Jianyu Liang, Soon‐Ku Hong, N. Kouklin, Applied Physics Letters Materials ScienceEngineeringNanotechnologyNanoelectronicsSurface Science	2003	68

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