K. S. Stevens

Photoconductive ultraviolet sensor using Mg-doped GaN on Si(111)

K. S. Stevens, M. Kinniburgh, R. Beresford · Applied Physics Letters · 1995 · 133 citations

Wide-bandgap Semiconductor, Electrical Engineering, Direct Gap Semiconductor +13

Microstructure and photoluminescence of GaN grown on Si(111) by plasma-assisted molecular beam epitaxy

Akira Ohtani, K. S. Stevens, R. Beresford · Applied Physics Letters · 1994 · 105 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +14

Microstructure of AlN on Si (111) grown by plasma-assisted molecular beam epitaxy

K. S. Stevens, Akira Ohtani, M. Kinniburgh et al. · Applied Physics Letters · 1994 · 95 citations

Materials Science, Aluminium Nitride, Material Analysis +13

Demonstration of a silicon field-effect transistor using AlN as the gate dielectric

K. S. Stevens, M. Kinniburgh, A. F. Schwartzman et al. · Applied Physics Letters · 1995 · 57 citations

Engineering, Optoelectronic Devices, Integrated Circuits +18

Stability of hydrogenated amorphous silicon deposited at high temperatures with a remote hydrogen plasma

N. M. Johnson, Christoph E. Nebel, P. V. Santos et al. · Applied Physics Letters · 1991 · 56 citations

Engineering, High Hydrogen Dilution, Silicon On Insulator +16