F. Calle

Wide-bandgap semiconductor ultraviolet photodetectors

E. Monroy, F Omn s, F. Calle · Semiconductor Science and Technology · 2003 · 1.3K citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +13

Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy

E. Calleja, M. A. Sánchez-Garcı́a, F.J. Sánchez et al. · Physical review. B, Condensed matter · 2000 · 360 citations

Wide-bandgap Semiconductor, Engineering, Wurtzite Gan Nanocolumns +17

The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

M. A. Sánchez-Garcı́a, E. Calleja, E. Monroy et al. · Journal of Crystal Growth · 1998 · 316 citations

Materials Science, Aluminium Nitride, Electrical Engineering +9

III nitrides and UV detection

E. Muñoz, E. Monroy, J. L. Pau et al. · Journal of Physics Condensed Matter · 2001 · 271 citations

Short Wavelength Optic, Optical Materials, Engineering +21

High-performance GaN p-n junction photodetectors for solar ultraviolet applications

E. Monroy, E. Muñoz, F.J. Sánchez et al. · Semiconductor Science and Technology · 1998 · 220 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13