E. Muñoz - Concepedia

Author

E. Muñoz

Also Known As

E Munoz, E Muñoz, E. MUÑOZ, E. Munoz, E. Muñoz, E. Muñoz, E. Mũnoz, Eduardo Castro Muñoz, Muñoz Merino, Elias, Muñoz, Eduardo Castro

127

Publications

2.7K

Citations

H-Index

Concepts

All Affiliations

Universidad Politécnica de Madrid Centre National de la Recherche Scientifique Universidad Autónoma de Madrid Universidad de Valladolid

About

E. Muñoz is an author at Universidad Politécnica de Madrid specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	52	2.3K
2	Applied Physics	26	51	2.3K
3	Electrical Engineering	24	35	1.6K
4	Materials Engineering	8	8	226
5	Natural Sciences	5	5	397

E. Muñoz

Publications

2.5K

Citations

H-Index

Page 1

	Year	Citations
III nitrides and UV detection E. Muñoz, E. Monroy, J. L. Pau, Journal of Physics Condensed Matter Short Wavelength OpticOptical MaterialsEngineeringExciting ChallengeOptoelectronic Devices	2001	271
Photoconductive gain modelling of GaN photodetectors José A. Garrido, E. Monroy, I. Izpura, Semiconductor Science and Technology Wide-bandgap SemiconductorEngineeringVolume ModulationGan PhotodetectorsPhotodetectors	1998	184
AlGaN-based UV photodetectors E. Monroy, F. Calle, J. L. Pau, Journal of Crystal Growth Electrical EngineeringEngineeringPhotodetectorsApplied PhysicsAluminum Gallium Nitride	2001	180
AlGaN metal–semiconductor–metal photodiodes E. Monroy, F. Calle, E. Muñoz, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringElectronic DevicesSharp Cutoff Wavelengths	1999	139
Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes E. Monroy, F. Calle, J. L. Pau, Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringBack IlluminationOptoelectronic Devices	2000	103
EFFECT OF ARSENIC PRESSURE ON HEAT TREATMENT OF LIQUID EPITAXIAL GaAs E. Muñoz, W. L. Snyder, J.L. Moll Applied Physics Letters Materials EngineeringSemiconductorsElectrical EngineeringWide-bandgap SemiconductorEngineering	1970	82
Al x Ga 1−x N:Si Schottky barrier photodiodes with fast response and high detectivity E. Monroy, F. Calle, E. Muñoz, Applied Physics Letters Wide-bandgap SemiconductorAluminium NitrideOptical MaterialsEngineeringSi-doped Alxga1−xn Layers	1998	76
Effects of the local environment on the properties of <i>D</i> <i>X</i> centers in Si-doped GaAs and dilute Al<i>x</i>Ga1−<i>x</i>As alloys E. Calleja, E. Muñoz, P. M. Mooney, Applied Physics Letters Aluminium NitrideWide-bandgap SemiconductorEngineeringSi-doped GaasSemiconductors	1990	70
Nanoindentation on AlGaN thin films D. Cáceres, I. Vergara, R. González, Journal of Applied Physics Materials ScienceAluminium NitrideEngineeringAl ContentMechanical Properties	1999	69
Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis José A. Garrido, J. L. Sánchez-Rojas, A. Jiménez, Applied Physics Letters SemiconductorsAluminium NitrideElectrical EngineeringWide-bandgap SemiconductorEngineering	1999	66

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