E. Muñoz

Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy

E. Calleja, M. A. Sánchez-Garcı́a, F.J. Sánchez et al. · Physical review. B, Condensed matter · 2000 · 360 citations

Wide-bandgap Semiconductor, Engineering, Wurtzite Gan Nanocolumns +17

The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

M. A. Sánchez-Garcı́a, E. Calleja, E. Monroy et al. · Journal of Crystal Growth · 1998 · 316 citations

Materials Science, Aluminium Nitride, Electrical Engineering +9

High-performance GaN p-n junction photodetectors for solar ultraviolet applications

E. Monroy, E. Muñoz, F.J. Sánchez et al. · Semiconductor Science and Technology · 1998 · 220 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Yellow luminescence and related deep states in undoped GaN

E. Calleja, F.J. Sánchez, Durga Basak et al. · Physical review. B, Condensed matter · 1997 · 212 citations

Luminescence Intensity, Electrical Engineering, Photoluminescence +14

Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties

E. Calleja, M. A. Sánchez-Garcı́a, F.J. Sánchez et al. · Journal of Crystal Growth · 1999 · 196 citations

Materials Science, Engineering, Applied Physics +6