E. Muñoz - Concepedia

Author

E. Muñoz

Also Known As

E Muñoz, E. Leal-Muñoz, E. Munoz, E. Muñoz, E. Muñoz, ERARDO LEAL MUÑOZ, ElÍas Munoz, Erardo E Leal-Muñoz, Erardo Leal-Muñoz, Munoz, E.

136

Publications

3.7K

Citations

H-Index

Concepts

All Affiliations

Universidad Politécnica de Madrid Centre National de la Recherche Scientifique Universidad de La Frontera Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Paul Drude Institute for Solid State Electronics

About

E. Muñoz is an author at Universidad Politécnica de Madrid specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	31	60	3.4K
2	Applied Physics	31	55	3.3K
3	Electrical Engineering	28	46	2.4K
4	Industrial Engineering	3	3	66
5	Chemical Engineering	1	1	71

E. Muñoz

Publications

3.5K

Citations

H-Index

Page 1

	Year	Citations
Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy E. Calleja, M. A. Sánchez-Garcı́a, F.J. Sánchez, Physical review. B, Condensed matter Wide-bandgap SemiconductorEngineeringWurtzite Gan NanocolumnsLuminescence PropertySemiconductors	2000	360
The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1) M. A. Sánchez-Garcı́a, E. Calleja, E. Monroy, Journal of Crystal Growth Materials ScienceAluminium NitrideElectrical EngineeringEngineeringSurface Science	1998	316
High-performance GaN p-n junction photodetectors for solar ultraviolet applications E. Monroy, E. Muñoz, F.J. Sánchez, Semiconductor Science and Technology Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhotodetectorsUltraviolet Photodetectors	1998	220
Yellow luminescence and related deep states in undoped GaN E. Calleja, F.J. Sánchez, Durga Basak, Physical review. B, Condensed matter Luminescence IntensityElectrical EngineeringPhotoluminescenceEngineeringYellow Luminescence	1997	212
Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties E. Calleja, M. A. Sánchez-Garcı́a, F.J. Sánchez, Journal of Crystal Growth Materials ScienceEngineeringApplied PhysicsMolecular Beam EpitaxySilicon On Insulator	1999	196
Photoconductor gain mechanisms in GaN ultraviolet detectors E. Muñoz, E. Monroy, José A. Garrido, Applied Physics Letters PhotonicsElectrical EngineeringNonlinear ResponseEngineeringSapphire Substrates	1997	169
Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy E. Calleja, M. A. Sánchez-Garcı́a, Durga Basak, Physical review. B, Condensed matter Materials ScienceGa/si InterdiffusionElectrical EngineeringWide-bandgap SemiconductorMolecular-beam Epitaxy	1998	96
Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications F. Omnès, Norman Marenco, B. Beaumont, Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringOptical MaterialsGan Nucleation Layer	1999	93
Design of InGaAs linear graded buffer structures A. Sacedón, F. González-Sanz, E. Calleja, Applied Physics Letters Optical MaterialsEngineeringStructural MechanicsStructural OptimizationIi-vi Semiconductor	1995	77
Wet etching of GaN grown by molecular beam epitaxy on Si(111) T. Palacios, F. Calle, M. Varela, Semiconductor Science and Technology Materials ScienceAluminium NitrideElectrical EngineeringChemical EngineeringEngineering	2000	71

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