Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties - Concepedia

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Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties

196

Citations

96

References

1999

Year

E. Calleja, M. A. Sánchez-Garcı́a, F.J. Sánchez, F. Calle, F. B. Naranjo, E. Muñoz, Sergio I. Molina, Ana M. Sánchez, F. J. Pacheco, R. Garcı́a

Journal of Crystal Growth

Materials ScienceEngineeringApplied PhysicsMolecular Beam EpitaxySilicon On InsulatorEpitaxial GrowthElectrical PropertiesOptoelectronicsCompound Semiconductor

References

	Year	Citations

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