Concepedia

Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties

E. Calleja, M. A. Sánchez-Garcı́a, F.J. Sánchez, F. Calle, F. B. Naranjo, E. Muñoz, Sergio I. Molina, Ana M. Sánchez, F. J. Pacheco, R. Garcı́a

Journal of Crystal Growth · 1999 · 196 citations · 96 references

DOI

Concepts

References

96

Strain-related phenomena in GaN thin films

C. Kisielowski, Joachim Krüger, S. Ruvimov et al. · Physical review. B, Condensed matter · 1996 · 886 citations

, , +17

Deep donor levels (<i>D</i> <i>X</i> centers) in III-V semiconductors

P. M. Mooney · Journal of Applied Physics · 1990 · 866 citations

, , +17

Scattering of electrons at threading dislocations in GaN

Nils Weimann, L.F. Eastman, D. Doppalapudi et al. · Journal of Applied Physics · 1998 · 615 citations

, , +17

Experimental Proof of the Existence of a New Electronic Complex in Silicon

J. R. Haynes · Physical Review Letters · 1960 · 608 citations

, , +7

Optical constants of epitaxial AlGaN films and their temperature dependence

Daniel Brunner, H. Angerer, E. Bustarret et al. · Journal of Applied Physics · 1997 · 601 citations

, , +17