F. J. Pacheco

Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties

E. Calleja, M. A. Sánchez-Garcı́a, F.J. Sánchez et al. · Journal of Crystal Growth · 1999 · 196 citations

Engineering, Materials Engineering, Materials Science +14

Design of InGaAs linear graded buffer structures

A. Sacedón, F. González-Sanz, E. Calleja et al. · Applied Physics Letters · 1995 · 77 citations

Engineering, Materials Engineering, Materials Science +17

The effect of Si doping on the defect structure of GaN/AlN/Si(111)

Sergio I. Molina, Ana M. Sánchez, F. J. Pacheco et al. · Applied Physics Letters · 1999 · 57 citations

Engineering, Materials Engineering, Materials Science +17

Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers

P. Kidd, D. J. Dunstan, H.G. Colson et al. · Journal of Crystal Growth · 1996 · 48 citations

Engineering, Materials Engineering, Materials Science +14

Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation-free (<105 cm−2) and unstrained epilayers

Sergio I. Molina, F. J. Pacheco, D. Araújo et al. · Applied Physics Letters · 1994 · 47 citations

Engineering, Materials Engineering, Materials Science +17