F. González-Sanz

Design of InGaAs linear graded buffer structures

A. Sacedón, F. González-Sanz, E. Calleja et al. · Applied Physics Letters · 1995 · 77 citations

Optical Materials, Engineering, Structural Mechanics +18

Dependence on the In concentration of the piezoelectric field in (111)B InGaAs/GaAs strained heterostructures

J. L. Sánchez-Rojas, A. Sacedón, F. González-Sanz et al. · Applied Physics Letters · 1994 · 66 citations

Wide-bandgap Semiconductor, Categoryquantum Electronics, Engineering +18

Plastic relaxation of metamorphic single layer and multilayer InGaAs/GaAs structures

D. J. Dunstan, P. Kidd, Paul F. Fewster et al. · Applied Physics Letters · 1994 · 50 citations

Materials Engineering, Electrical Engineering, Strained Ingaas +12

Photoluminescence and Raman analysis of strain and composition in InGaAs/AlGaAs pseudomorphic heterostructures

José Manuel Gilpérez, F. González-Sanz, E. Calleja et al. · Semiconductor Science and Technology · 1992 · 18 citations

Aluminium Nitride, Engineering, Ii-vi Semiconductor +16

Nonlinear optical response, screening, and distribution of strain in piezoelectric multiple quantum wells

X. R. Huang, D. R. Harken, Alexander N. Cartwright et al. · Journal of Applied Physics · 1994 · 16 citations

Photonics, Quantum Science, Optical Materials +15