P. M. Mooney

Deep donor levels (<i>D</i> <i>X</i> centers) in III-V semiconductors

P. M. Mooney · Journal of Applied Physics · 1990 · 860 citations

Semiconductors, Materials Science, Semiconductor Technology +15

Measurements of alloy composition and strain in thin Ge<i>x</i>Si1−<i>x</i> layers

J. C. Tsang, P. M. Mooney, F. H. Dacol et al. · Journal of Applied Physics · 1994 · 425 citations

Engineering, Surface-enhanced Raman Scattering, Alloy Composition +21

Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons

P. M. Mooney, L. J. Cheng, M. Süli et al. · Physical review. B, Solid state · 1977 · 295 citations

Semiconductor Technology, Defect Energy Levels, Annealing Behavior +13

Controllable valley splitting in silicon quantum devices

Srijit Goswami, Keith Slinker, Mark Friesen et al. · Nature Physics · 2006 · 252 citations · Full text

Quantum Science, Engineering, Physics +4

Electron Localization by a Metastable Donor Level in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">GaAs</mml:mi></mml:math>: A New Mechanism Limiting the Free-Carrier Density

Thomas Theis, P. M. Mooney, S. L. Wright · Physical Review Letters · 1988 · 177 citations

Engineering, Electronic Structure, Metastable Donor Level +18