L. J. Cheng

1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the Divacancy

L. J. Cheng, J. C. Corelli, J. W. Corbett et al. · Physical Review · 1966 · 328 citations

Optical Materials, Engineering, Silicon On Insulator +18

Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons

P. M. Mooney, L. J. Cheng, M. Süli et al. · Physical review. B, Solid state · 1977 · 295 citations

Semiconductor Technology, Defect Energy Levels, Annealing Behavior +13

Characteristics of Neutron Damage in Silicon

L. J. Cheng, J. A. Lori · Physical Review · 1968 · 151 citations

Engineering, Nuclear Physics, Radiation Materials Science +19

A quenched-in defect in boron-doped silicon

J. D. Gerson, L. J. Cheng, J. W. Corbett · Journal of Applied Physics · 1977 · 64 citations

Semiconductors, Semiconductor Technology, Engineering +14

Carbon interstitial in electron-irradiated silicon

Y.H. Lee, L. J. Cheng, J. D. Gerson et al. · Solid State Communications · 1977 · 64 citations

Applied Physics, Semiconductor Device Fabrication, Carbon Interstitial +2