Carbon interstitial in electron-irradiated silicon

Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

D. V. Lang · Journal of Applied Physics · 1974 · 3.7K citations

Transient Grating, Engineering, Exponential Capacitance Transients +18

Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy

G. D. Watkins, J. W. Corbett · Physical Review · 1965 · 719 citations

Activated Reorientation, Engineering, Magnetic Resonance +17

RADIATION DAMAGE IN SEMICONDUCTORS.

P. Baruch · Defense Technical Information Center (DTIC) · 1963 · 564 citations

EPR Observation of the Isolated Interstitial Carbon Atom in Silicon

G. D. Watkins, K. L. Brower · Physical Review Letters · 1976 · 275 citations

Engineering, Epr Observation, Crystalline Defects +11

Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boron

G. D. Watkins · Physical review. B, Solid state · 1975 · 252 citations

Engineering, Integrated Circuits, Silicon On Insulator +18