Defense Technical Information Center (DTIC) · 1963 · 564 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDefects In Electronic MaterialsDislocations In SemiconductorsRadiation Damage In MaterialsRadiation Transport In MatterSemiconductor DefectsThermal Properties Of SemiconductorsDislocationsIrradiation DamageRadiation DamageRadiation DefectsRadiation EffectsRadiation-induced DefectsSiliconSilicon Defects
The effect of radiation-induced point defects on impurity diffusion in silicon is investigated using proton and electron irradiation. The active defects have a diffusion length near 3 microns in pulled silicon, and dislocations are found to act as defect sinks, but are not dominant for dislocations densities less than 10 to the 7th power/sq cm. Defect precipitation is shown to occur at high defect concentrations, leading to enhanced annealing of point defects and formation of stress centers stable against annealing to 1000C. A model is proposed by which impurities diffuse by a vacancy mechanism and vacancy diffusion is limited by complex formation with oxygen atoms. (Author)