S. L. Wright - Concepedia

Author

S. L. Wright

IBM Research - Thomas J. Watson Research Center

Also Known As

S. L Wright, S. L. Wright, S. Wright, S.L. Wright

Publications

1.6K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)Xerox (United States)University of Wisconsin–Madison University of Minnesota

About

S. L. Wright is an author at IBM Research - Thomas J. Watson Research Center specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	33	1.3K
2	Applied Physics	21	34	1.4K
3	Electrical Engineering	15	20	565
4	Natural Sciences	2	2	54
5	Computer Engineering	1	1	26

S. L. Wright

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Electron Localization by a Metastable Donor Level in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">GaAs</mml:mi></mml:math>: A New Mechanism Limiting the Free-Carrier Density Thomas Theis, P. M. Mooney, S. L. Wright Physical Review Letters EngineeringElectronic StructureMetastable Donor LevelSemiconductor DeviceSemiconductor Nanostructures	1988	177
The capture barrier of the <i>D</i> <i>X</i> center in Si-doped Al<i>x</i>Ga1−<i>x</i>As P. M. Mooney, N. Caswell, S. L. Wright Journal of Applied Physics Materials ScienceSemiconductorsMaterials EngineeringCapture BarrierEngineering	1987	137
Effect of local alloy disorder on emission kinetics of deep donors (<i>D</i> <i>X</i> centers) in Al<i>x</i>Ga1−<i>x</i>As of low Al content P. M. Mooney, Thomas Theis, S. L. Wright Applied Physics Letters	1988	103
Energy band-gap discontinuities in GaAs:(Al,Ga)As heterojunctions J. Batey, S. L. Wright, D. J. DiMaria Journal of Applied Physics Wide-bandgap SemiconductorEngineeringSemiconductor PhysicsCurrent TransportSemiconductor Materials	1985	93
Noise spectroscopy of deep level (<i>D</i> <i>X</i>) centers in GaAs-Al<i>x</i>Ga1−<i>x</i>As heterostructures J. R. Kirtley, Thomas Theis, P. M. Mooney, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringSemiconductor DeviceSemiconductorsRf Semiconductor	1988	92
Landau-level broadening and scattering time in modulation doped GaAs/AlGaAs heterostructures F. F. Fang, T. P. Smith, S. L. Wright Surface Science Quantum ScienceEngineeringPhysicsApplied PhysicsQuantum Materials	1988	87
Effects of the local environment on the properties of <i>D</i> <i>X</i> centers in Si-doped GaAs and dilute Al<i>x</i>Ga1−<i>x</i>As alloys E. Calleja, E. Muñoz, P. M. Mooney, Applied Physics Letters Aluminium NitrideWide-bandgap SemiconductorEngineeringSi-doped GaasSemiconductors	1990	70
Effect of the silicon doping concentration on the recombination kinetics of <i>D</i> <i>X</i> centers in Al0.35Ga0.65As N. Caswell, P. M. Mooney, S. L. Wright, Applied Physics Letters Materials ScienceSemiconductorsIon ImplantationConduction BandEngineering	1986	49
Unpinned Schottky barrier formation at metal–GaAs interfaces L. J. Brillson, R. E. Viturro, C. Mailhiot, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena SemiconductorsMaterials ScienceSemiconductor TechnologyEngineeringCrystalline Defects	1988	47
Band bending and interface states for metals on GaAs R. E. Viturro, J. L. Shaw, C. Mailhiot, Applied Physics Letters Materials ScienceElectrical EngineeringPhotoluminescenceEngineeringPhysics	1988	45

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