S. L. Wright

Electron Localization by a Metastable Donor Level in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">GaAs</mml:mi></mml:math>: A New Mechanism Limiting the Free-Carrier Density

Thomas Theis, P. M. Mooney, S. L. Wright · Physical Review Letters · 1988 · 179 citations

Natural Sciences, Materials Science, Condensed Matter Physics +16

The capture barrier of the <i>D</i> <i>X</i> center in Si-doped Al<i>x</i>Ga1−<i>x</i>As

P. M. Mooney, N. Caswell, S. L. Wright · Journal of Applied Physics · 1987 · 138 citations

Natural Sciences, Materials Engineering, Materials Science +10

Effect of local alloy disorder on emission kinetics of deep donors (<i>D</i> <i>X</i> centers) in Al<i>x</i>Ga1−<i>x</i>As of low Al content

P. M. Mooney, Thomas Theis, S. L. Wright · Applied Physics Letters · 1988 · 103 citations

Natural Sciences, Materials Science, Physics +11

Energy band-gap discontinuities in GaAs:(Al,Ga)As heterojunctions

J. Batey, S. L. Wright, D. J. DiMaria · Journal of Applied Physics · 1985 · 93 citations

Engineering, Materials Science, Physics +17

Noise spectroscopy of deep level (<i>D</i> <i>X</i>) centers in GaAs-Al<i>x</i>Ga1−<i>x</i>As heterostructures

J. R. Kirtley, Thomas Theis, P. M. Mooney et al. · Journal of Applied Physics · 1988 · 92 citations

Engineering, Electrical Engineering, Materials Science +17