J. Nissilä

Observation of Native Ga Vacancies in GaN by Positron Annihilation

K. Saarinen, T. Laine, S. Kuisma et al. · Physical Review Letters · 1997 · 491 citations

Wide-bandgap Semiconductor, Gan Bulk Crystals, Positron Annihilation +15

Identification of Vacancy-Impurity Complexes in Highly<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="italic">n</mml:mi></mml:math>-Type Si

K. Saarinen, J. Nissilä, H. Kauppinen et al. · Physical Review Letters · 1999 · 80 citations · Full text

Vacancy-impurity Complexes, Single Impurity, Engineering +14

The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals

K. Saarinen, J. Nissilä, P. Hautojärvi et al. · Applied Physics Letters · 1999 · 79 citations

Wide-bandgap Semiconductor, Gan Bulk Crystals, Electrical Engineering +12

Formation of Vacancy-Impurity Complexes by Kinetic Processes in Highly As-Doped Si

V. Ranki, J. Nissilä, K. Saarinen · Physical Review Letters · 2002 · 57 citations

Performance analysis of a digital positron lifetime spectrometer

J. Nissilä, K. Rytsölä, Reino Aavikko et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2004 · 54 citations

Electrical Engineering, Analytical Instrumentation, Performance Analysis +6