T. Laine

Observation of Native Ga Vacancies in GaN by Positron Annihilation

K. Saarinen, T. Laine, S. Kuisma et al. · Physical Review Letters · 1997 · 495 citations

Engineering, Materials Science, Physics +16

Adiabatic processes in three-level systems

T. Laine, Stig Stenholm · Physical Review A · 1996 · 111 citations

Natural Sciences, Physics, Computational Physics +13

Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy

E. Calleja, M. A. Sánchez-Garcı́a, Durga Basak et al. · Physical review. B, Condensed matter · 1998 · 96 citations

Engineering, Materials Science, Physics +17

Divacancy and resistivity profiles in n-type Si implanted with 1.15-MeV protons

H. Kauppinen, C. Corbel, Kerstin Skog et al. · Physical review. B, Condensed matter · 1997 · 46 citations

Engineering, Materials Science, Physics +16

Observation of a vacancy at the<i>DX</i>center in Si- and Sn-doped AlGaAs

J. Mäkinen, T. Laine, K. Saarinen et al. · Physical Review Letters · 1993 · 44 citations

Natural Sciences, Materials Science, Physics +17