T. Laine - Concepedia

Author

T. Laine

Helsinki Institute of Physics

Also Known As

Financial Physics Lab, Finland, Laine, Timo Aukusti, T Laine, T. A. Laine, T. Laine, Timo A. Laine

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Helsinki Institute of Physics Centre National de la Recherche Scientifique Polish Academy of Sciences Institute of High Pressure Physics University of Warsaw

About

T. Laine is an author at Helsinki Institute of Physics specializing in applied physics, physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	11	828
2	Applied Physics	10	11	839
3	Electrical Engineering	6	6	244
4	Natural Sciences	5	5	695
5	Materials Engineering	1	1	16

T. Laine

Publications

969

Citations

H-Index

Page 1

	Year	Citations
Observation of Native Ga Vacancies in GaN by Positron Annihilation K. Saarinen, T. Laine, S. Kuisma, Physical Review Letters Wide-bandgap SemiconductorGan Bulk CrystalsPositron AnnihilationEngineeringYellow Luminescence	1997	491
Adiabatic processes in three-level systems T. Laine, Stig Stenholm Physical Review A Thermodynamic ModellingPhysicsNatural SciencesEquilibrium ThermodynamicsStimulated Raman Process	1996	110
Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy E. Calleja, M. A. Sánchez-Garcı́a, Durga Basak, Physical review. B, Condensed matter Materials ScienceGa/si InterdiffusionElectrical EngineeringWide-bandgap SemiconductorMolecular-beam Epitaxy	1998	96
Divacancy and resistivity profiles in n-type Si implanted with 1.15-MeV protons H. Kauppinen, C. Corbel, Kerstin Skog, Physical review. B, Condensed matter EngineeringNuclear PhysicsPositron Annihilation SpectroscopyCharacteristic Positron LifetimeSilicon On Insulator	1997	46
Observation of compensating Ga vacancies in highly Si-doped GaAs T. Laine, K. Saarinen, J. Mäkinen, Physical review. B, Condensed matter Electrical EngineeringEngineeringPhysicsNanoelectronicsSi-doped Gaas	1996	44
Observation of a vacancy at the<i>DX</i>center in Si- and Sn-doped AlGaAs J. Mäkinen, T. Laine, K. Saarinen, Physical Review Letters Materials ScienceSemiconductorsPositron AnnihilationEngineeringPhysics	1993	42
Observation Of Native Ga Vacancies In Gan By Positron Annihilation K. Saarinen, T. Laine, S. Kuisma, MRS Proceedings Wide-bandgap SemiconductorPositron AnnihilationPhysicsPositron Annihilation SpectroscopyNatural Sciences	1997	31
Defects in GaAs grown by molecular-beam epitaxy at low temperatures: stoichiometry, doping, and deactivation of <i>n</i>-type conductivity T. Laine, K. Saarinen, P. Hautojärvi, Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringNative DefectsLow Temperatures	1999	28
Construction of the Helsinki University of Technology (HUT) pulsed positron beam K. -E. Fällström, T. Laine Applied Surface Science Electrical EngineeringEngineeringHelsinki UniversityPositron BeamInstrumentation	1999	20
Self-guided waves and exact solutions of the nonlinear Helmholtz equation T. Laine, Ari T. Friberg Journal of the Optical Society of America B Optical MaterialsEngineeringWave OpticWave MotionNonlinear Acoustic	2000	18

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