Concepedia

Impurity Incorporation

Impurity Incorporation is the process by which foreign atoms or molecules are introduced into a growing semiconductor crystal lattice during crystallization, thereby altering the electrical or structural properties of the material.

639

Publications

28.7K

Citations

2.6K

Authors

660

Institutions

Publications per year

2017–2026

81

Parents

Publications

639

The Distribution of Solute in Crystals Grown from the Melt. Part I. Theoretical

Justin Burton, R. C. Prim, W. P. Slichter · The Journal of Chemical Physics · 1953 · 1.4K citations

, , +17

The mechanism of silicon modification in aluminum-silicon alloys: Impurity induced twinning

Shu‐Zu Lu, A. Hellawell · Metallurgical Transactions A · 1987 · 647 citations

, , +12

Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering

Tadatsugu Minami, Hirotoshi Sato, Hidehito Nanto et al. · Japanese Journal of Applied Physics · 1985 · 546 citations

, , +17

Impurities in silicon solar cells

J.R. Davis, A. Rohatgi, R.H. Hopkins et al. · IEEE Transactions on Electron Devices · 1980 · 466 citations

, , +17

Improvement in Room Temperature Ductility of the L1<SUB>2</SUB> Type Intermetallic Compound Ni<SUB>3</SUB>Al by Boron Addition

Kiyoshi Aoki, Osamu Izumi · Journal of the Japan Institute of Metals and Materials · 1979 · 451 citations · Full text

, , +17

1–5 of 639

Authors

2.6K

  1. JS
    James S. Speck

    University of California, Santa Barbara, United States

    7 publications · 428 citations

    7

    h-index

  2. JM
    Jochen M. Schneider

    RWTH Aachen University, Germany

    7 publications · 137 citations

    7

    h-index

  3. UK
    Umesh K. Mishra

    University of California, Santa Barbara, United States

    7 publications · 858 citations

    7

    h-index

  4. FB
    F. Bertram

    Otto-von-Guericke-Universität Magdeburg, Germany

    6 publications · 302 citations

    6

    h-index

  5. SP
    Steven P. DenBaars

    University of California, Santa Barbara, United States

    6 publications · 803 citations

    6

    h-index

1–5 of 2.6K

Institutions

660

  1. Lawrence Berkeley National Laboratory

    Berkeley, United States

    12 h-index

    36 publications

    1K citations

  2. Max Planck Institute for Plasma Physics

    Garching, Germany

    12 h-index

    37 publications

    2.2K citations

  3. Tohoku University

    Sendai, Japan

    12 h-index

    39 publications

    1.8K citations

  4. Centre National de la Recherche Scientifique

    Paris, France

    12 h-index

    45 publications

    3.1K citations

  5. University of California, Santa Barbara

    Santa Barbara, United States

    11 h-index

    60 publications

    6.1K citations

  6. Massachusetts Institute of Technology

    Cambridge, United States

    11 h-index

    21 publications

    1.1K citations

  7. Technische Universität Berlin

    Berlin, Germany

    10 h-index

    26 publications

    1.4K citations

  8. The University of Osaka

    Osaka, Japan

    10 h-index

    31 publications

    823 citations

1–8 of 660

Venues

  1. Applied Physics Letters

    42 publications · 1.9K citations

    26

    h-index

  2. Journal of Applied Physics

    48 publications · 2.7K citations

    25

    h-index

  3. Journal of Crystal Growth

    52 publications · 2.2K citations

    25

    h-index

  4. Journal of The Electrochemical Society

    JES · 22 publications · 934 citations

    17

    h-index

  5. Physical Review Letters

    PRL · 16 publications · 882 citations

    15

    h-index

1–5