Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Yasuo Koide et al. · Journal of Crystal Growth · 1989 · 688 citations

Engineering, Materials Engineering, Materials Science +13

Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

S. J. Rosner, Elizabeth C. Carr, M. J. Ludowise et al. · Applied Physics Letters · 1997 · 530 citations

Natural Sciences, Materials Engineering, Materials Science +17

Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

Tomoya Sugahara, Hisao Satô, Maosheng Hao et al. · Japanese Journal of Applied Physics · 1998 · 469 citations

Engineering, Materials Engineering, Materials Science +17

Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1998 · 336 citations

Engineering, Electrical Engineering, Materials Science +17

Formation Mechanism of Nanotubes in GaN

Z. Liliental‐Weber, Y. Chen, S. Ruvimov et al. · Physical Review Letters · 1997 · 318 citations

Natural Sciences, Materials Science, Physics +15