Shin‐ichi Nagahama

Author

Shin‐ichi Nagahama

Also Known As

S Nagahama, S. Nagahama, SHIN‐ICHI NAGAHAMA, Shigenori Nagahama, Shiho Nagahama, Shin-Ichi Nagahama, Shin-ichi NAGAHAMA, Shin-ichi Nagahama, Shin-ichi Nagahama Shin-ichi Nagahama, Shinichi NAGAHAMA

122

Publications

13.7K

Citations

H-Index

Concepts

All Affiliations

Nichia Corporation (Japan)Kyoto University University of Regensburg

About

Shin‐ichi Nagahama is an author at Nichia Corporation (Japan) specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	43	72	13.5K
2	Applied Physics	43	72	13.5K
3	Electrical Engineering	39	58	11.9K
4	Materials Science	8	8	755
5	Health Sciences	1	1	24

Shin‐ichi Nagahama

Publications

13.6K

Citations

H-Index

Page 1

	Year	Citations
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Japanese Journal of Applied Physics PhotonicsElectrical EngineeringEngineeringPhysicsIngan Multi-quantum-well	1996	2.5K
High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Japanese Journal of Applied Physics High-brightness Ingan BlueEngineeringGreen LedsLuminescence PropertyTypical Green Leds	1995	1.5K
Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Japanese Journal of Applied Physics White OledPhotonicsElectrical EngineeringSolid-state LightingEngineering	1995	1.1K
InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Applied Physics Letters Semiconductor TechnologyPhotonicsElectrical EngineeringWide-bandgap SemiconductorElog Substrate	1998	730
High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Applied Physics Letters High-power BlueViolet Light-emitting DiodesEngineeringOptoelectronic DevicesElectronic Devices	1995	594
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Applied Physics Letters PhotonicsElectrical EngineeringRoom TemperatureEngineeringSemiconductor Lasers	1996	540
InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Japanese Journal of Applied Physics Semiconductor TechnologyPhotonicsElectrical EngineeringWide-bandgap SemiconductorEngineering	1997	470
InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Japanese Journal of Applied Physics Optical MaterialsEngineeringLaser ApplicationsLaser MaterialOptoelectronic Devices	1996	342
Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Applied Physics Letters SemiconductorsPhotonicsElectrical EngineeringSmall Thermal ResistanceGan Substrates	1998	334
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Applied Physics Letters PhotonicsElectrical EngineeringRoom TemperatureAdjacent QuantumEngineering	1997	330

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