Masayuki Senoh - Concepedia

Concepedia

Author

Masayuki Senoh

Nichia Corporation (Japan)

Also Known As

M Senoh, M. Senoh, Masayuki Senoh, Masayuki Senoh Masayuki Senoh

45

Publications

20.9K

Citations

39

H-Index

27

Concepts

All Affiliations

Nichia Corporation (Japan)

MS

About

Masayuki Senoh is an author at Nichia Corporation (Japan) specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	39	41	20.9K
2	Applied Physics	39	41	20.9K
3	Electrical Engineering	34	34	19.6K
4	Materials Science	4	4	1.1K
5	Materials Engineering	2	2	1.5K

Masayuki Senoh

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42

Publications

20.9K

Citations

39

H-Index

	Year	Citations
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes Shuji Nakamura, Takashi Mukai, Masayuki Senoh Applied Physics Letters White OledElectrical EngineeringElectronic DevicesOptical MaterialsDh Leds	1994	3.7K
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Japanese Journal of Applied Physics PhotonicsElectrical EngineeringEngineeringPhysicsIngan Multi-quantum-well	1996	2.5K
High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Japanese Journal of Applied Physics High-brightness Ingan BlueEngineeringGreen LedsLuminescence PropertyTypical Green Leds	1995	1.5K
Thermal Annealing Effects on P-Type Mg-Doped GaN Films Shuji Nakamura, Takashi Mukai, Masayuki Senoh, Japanese Journal of Applied Physics Materials EngineeringSemiconductorsElectrical EngineeringDl EmissionsEngineering	1992	1.1K
Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Japanese Journal of Applied Physics White OledPhotonicsElectrical EngineeringSolid-state LightingEngineering	1995	1.1K
Hole Compensation Mechanism of P-Type GaN Films Shuji Nakamura, Naruhito Iwasa, Masayuki Senoh, Japanese Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1992	1.1K
High-Power GaN P-N Junction Blue-Light-Emitting Diodes Shuji Nakamura, Takashi Mukai, Masayuki Senoh Japanese Journal of Applied Physics Electrical EngineeringSolid-state LightingEngineeringGan LedsNanoelectronics	1991	827
InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Applied Physics Letters Semiconductor TechnologyPhotonicsElectrical EngineeringWide-bandgap SemiconductorElog Substrate	1998	730
High-power InGaN/GaN double-heterostructure violet light emitting diodes Shuji Nakamura, Masayuki Senoh, Takashi Mukai Applied Physics Letters PhotonicsElectrical EngineeringElectronic DevicesPeak WavelengthsEngineering	1993	658
High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Applied Physics Letters High-power BlueViolet Light-emitting DiodesEngineeringOptoelectronic DevicesElectronic Devices	1995	594

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