S. J. Rosner

Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

S. J. Rosner, Elizabeth C. Carr, M. J. Ludowise et al. · Applied Physics Letters · 1997 · 528 citations

Materials Science, Luminescence Intensity, Wide-bandgap Semiconductor +15

Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

Xuehua Wu, C. R. Elsass, A. Abare et al. · Applied Physics Letters · 1998 · 456 citations

Semiconductors, Quantum Science, Structural Origin +15

Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures

T. I. Kamins, Elizabeth C. Carr, R. Stanley Williams et al. · Journal of Applied Physics · 1997 · 309 citations

Materials Engineering, Materials Science, Epitaxial Growth +13

Calibrated nanoscale capacitance measurements using a scanning microwave microscope

H. Huber, Manuel Moertelmaier, Thomas M. Wallis et al. · Review of Scientific Instruments · 2010 · 143 citations

Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

H. Marchand, N. Zhang, Lingyan Zhao et al. · MRS Internet Journal of Nitride Semiconductor Research · 1999 · 119 citations · Full text