A. Zauner

Recent advances in defect-selective etching of GaN

J.L. Weyher, Paul D. Brown, Jean‐Luc Rouvière et al. · Journal of Crystal Growth · 2000 · 133 citations

Engineering, Materials Engineering, Materials Science +14

Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

J.L. Weyher, Paul D. Brown, A. Zauner et al. · Journal of Crystal Growth · 1999 · 92 citations

Engineering, Materials Engineering, Materials Science +16

Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation

A. Zauner, J.L. Weyher, Marco Plomp et al. · Journal of Crystal Growth · 2000 · 72 citations

Natural Sciences, Materials Science, Physics +16

Fully-depleted SOI technology using high-k and single-metal gate for 32 nm node LSTP applications featuring 0.179 μm² 6T-SRAM bitcell

C. Fenouillet-Béranger, J. Todeschini, Jean-Christophe Le-Denmat et al. · 2007 · 61 citations

Engineering, Computer Engineering, Electrical Engineering +15

Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology

A. Zauner, E. Aret, W.J.P. van Enckevort et al. · Journal of Crystal Growth · 2002 · 54 citations

Natural Sciences, Materials Engineering, Materials Science +16