Hisao Satô

Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

Tomoya Sugahara, Hisao Satô, Maosheng Hao et al. · Japanese Journal of Applied Physics · 1998 · 466 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Photoluminescence +14

Close-up of the end-Permian mass extinction horizon recorded in the Meishan section, South China: Sedimentary, elemental, and biotic characterization and a negative shift of sulfate sulfur isotope ratio

Kunio Kaiho, Zhong‐Qiang Chen, Hodaka Kawahata et al. · Palaeogeography Palaeoclimatology Palaeoecology · 2006 · 84 citations

Meishan Section, Engineering, Geology +6

Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganic Chemical Vapor Deposition

Hisao Satô, Tomoya Sugahara, Yoshiki Naoi et al. · Japanese Journal of Applied Physics · 1998 · 46 citations

Materials Engineering, Materials Science, Aluminium Nitride +13

Cl incorporation into successively zoned amphiboles from the Ramnes cauldron, Norway

Hisao Satô, Yoshiaki Yamaguchi, Kuniaki Makino · American Mineralogist · 1997 · 35 citations

Engineering, Authigenic Mineral Formation, Chemistry +22

Monolithic Blue LED Series Arrays for High-Voltage AC Operation

Jin‐Ping Ao, Hisao Satô, Takashi Mizobuchi et al. · physica status solidi (a) · 2002 · 33 citations

White Oled, Electrical Engineering, Chip Size +13