Carl‐Mikael Zetterling

SiC power devices — Present status, applications and future perspective

Mikael Östling, Reza Ghandi, Carl‐Mikael Zetterling · 2011 · 321 citations

Wide-bandgap Semiconductor, Engineering, Power Devices +17

500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC

Luigia Lanni, B. Gunnar Malm, Mikael Östling et al. · IEEE Electron Device Letters · 2013 · 91 citations · Full text

Semiconductor Technology, Transistor Current Gain, Electrical Engineering +7

A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology

Raheleh Hedayati, Luigia Lanni, Saul Rodriguez et al. · IEEE Electron Device Letters · 2014 · 83 citations · Full text

Semiconductor Technology, °C Operational Amplifier, Electrical Engineering +8

Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide

Kristina Buchholt, Reza Ghandi, Martin Domeij et al. · Applied Physics Letters · 2011 · 77 citations · Full text

Engineering, P-type 4H-silicon Carbide, Thin Film Process Technology +16

Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

Seung‐Kyun Lee, Carl‐Mikael Zetterling, Mikael Östling et al. · Solid-State Electronics · 2002 · 73 citations

Materials Science, Schottky Barrier Height, Engineering +9