Carl‐Mikael Zetterling

SiC power devices — Present status, applications and future perspective

Mikael Östling, Reza Ghandi, Carl‐Mikael Zetterling · 2011 · 329 citations

Engineering, Electrical Engineering, Materials Science +17

500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC

Luigia Lanni, B. Gunnar Malm, Mikael Östling et al. · IEEE Electron Device Letters · 2013 · 91 citations · Full text

Engineering, Electrical Engineering, Microelectronics +15

A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology

Raheleh Hedayati, Luigia Lanni, Saul Rodriguez et al. · IEEE Electron Device Letters · 2014 · 84 citations · Full text

Engineering, Electrical Engineering, Analog Electronics +16

Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide

Kristina Buchholt, Reza Ghandi, Martin Domeij et al. · Applied Physics Letters · 2011 · 78 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

Seung‐Kyun Lee, Carl‐Mikael Zetterling, Mikael Östling et al. · Solid-State Electronics · 2002 · 73 citations

Natural Sciences, Materials Engineering, Materials Science +16