Luigia Lanni - Concepedia

Author

Luigia Lanni

KTH Royal Institute of Technology

Also Known As

L. Lanni, Luigia Lanni

Publications

658

Citations

H-Index

Concepts

All Affiliations

KTH Royal Institute of Technology Kista Photonics Research Center

About

Luigia Lanni is an author at KTH Royal Institute of Technology specializing in microelectronics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	18	585
2	Electrical Engineering	16	18	585
3	Applied Physics	12	12	436
4	Computer Engineering	1	1	17
5	Materials Engineering	1	1	23

Luigia Lanni

Publications

595

Citations

H-Index

Page 1

	Year	Citations
500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC Luigia Lanni, B. Gunnar Malm, Mikael Östling, IEEE Electron Device Letters Semiconductor TechnologyTransistor Current GainElectrical EngineeringEngineeringApplied Physics	2013	91
A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology Raheleh Hedayati, Luigia Lanni, Saul Rodriguez, IEEE Electron Device Letters Semiconductor Technology°C Operational AmplifierElectrical EngineeringEngineeringHigh Temperature Operation	2014	83
Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC Luigia Lanni, Reza Ghandi, B. Gunnar Malm, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringPower DeviceNanoelectronicsElectronic Engineering	2012	64
Bipolar integrated circuits in SiC for extreme environment operation Carl‐Mikael Zetterling, Anders Hallén, Raheleh Hedayati, Semiconductor Science and Technology Electrical EngineeringEngineeringPower DeviceNanoelectronicsBias Temperature Instability	2017	37
500 °C Bipolar SiC Linear Voltage Regulator Saleh Kargarrazi, Luigia Lanni, Stefano Saggini, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringPower DeviceBias Temperature InstabilityPower Semiconductor Device	2015	34
Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC Raheleh Hedayati, Luigia Lanni, Ana Rusu, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringBandgap Voltage References	2015	32
Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C Ye Tian, Luigia Lanni, Ana Rusu, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringBare ChipEngineeringData Converter	2016	27
Future high temperature applications for SiC integrated circuits Carl‐Mikael Zetterling, Luigia Lanni, Reza Ghandi, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Electrical EngineeringHigh Temperature MaterialsEngineeringHigh Voltage EngineeringHigh Temperature	2012	24
Influence of Passivation Oxide Thickness and Device Layout on the Current Gain of SiC BJTs Luigia Lanni, B. Gunnar Malm, Mikael Östling, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringPassivation Oxide ThicknessEngineeringSic Bjts	2014	24
High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits Sethu Saveda Suvanam, Shin-Ichiro Kuroki, Luigia Lanni, IEEE Transactions on Nuclear Science EngineeringRadiation Materials ScienceRadiation PhysicsPower ElectronicsOxide Charge	2016	24

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