Luigia Lanni

500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC

Luigia Lanni, B. Gunnar Malm, Mikael Östling et al. · IEEE Electron Device Letters · 2013 · 91 citations · Full text

Semiconductor Technology, Transistor Current Gain, Electrical Engineering +7

A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology

Raheleh Hedayati, Luigia Lanni, Saul Rodriguez et al. · IEEE Electron Device Letters · 2014 · 83 citations · Full text

Semiconductor Technology, °C Operational Amplifier, Electrical Engineering +8

Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC

Luigia Lanni, Reza Ghandi, B. Gunnar Malm et al. · IEEE Transactions on Electron Devices · 2012 · 64 citations · Full text

Electrical Engineering, Engineering, Power Device +11

Bipolar integrated circuits in SiC for extreme environment operation

Carl‐Mikael Zetterling, Anders Hallén, Raheleh Hedayati et al. · Semiconductor Science and Technology · 2017 · 37 citations

Electrical Engineering, Engineering, Power Device +14

500 °C Bipolar SiC Linear Voltage Regulator

Saleh Kargarrazi, Luigia Lanni, Stefano Saggini et al. · IEEE Transactions on Electron Devices · 2015 · 34 citations · Full text

Electrical Engineering, Engineering, Power Device +8