B. Gunnar Malm

Spin-Torque and Spin-Hall Nano-Oscillators

Tingsu Chen, Randy K. Dumas, Anders Eklund et al. · Proceedings of the IEEE · 2016 · 374 citations

Engineering, Oscillators, Spin Systems +17

500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC

Luigia Lanni, B. Gunnar Malm, Mikael Östling et al. · IEEE Electron Device Letters · 2013 · 91 citations · Full text

Semiconductor Technology, Transistor Current Gain, Electrical Engineering +7

A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology

Raheleh Hedayati, Luigia Lanni, Saul Rodriguez et al. · IEEE Electron Device Letters · 2014 · 83 citations · Full text

Semiconductor Technology, °C Operational Amplifier, Electrical Engineering +8

Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC

Luigia Lanni, Reza Ghandi, B. Gunnar Malm et al. · IEEE Transactions on Electron Devices · 2012 · 64 citations · Full text

Electrical Engineering, Engineering, Power Device +11

Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs

Benedetto Buono, Reza Ghandi, Martin Domeij et al. · IEEE Transactions on Electron Devices · 2010 · 62 citations

Engineering, 4H-sic Power Bjts, Integrated Circuits +18