Concepedia

Author

B. Gunnar Malm

KTH Royal Institute of Technology

Also Known As

B G. Malm, B Gunnar Malm, B. G. Malm, B. Gunnar Malm, B.G Malm, B.G. Malm, B.Gunnar Malm, Bengt Gu Malm, Bengt Gunnar Malm, Malm, B. Gunnar

126

Publications

1.8K

Citations

22

H-Index

65

Concepts

All Affiliations

KTH Royal Institute of TechnologyUniversity of GothenburgUppsala UniversityNanosc (Sweden)Kista Photonics Research Center
BG

About

B. Gunnar Malm is an author at KTH Royal Institute of Technology specializing in electrical engineering, engineering, and microelectronics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

22

43

1.6K

2

Applied Physics

22

35

1.4K

3

Electrical Engineering

22

38

1.1K

4

Computer Engineering

3

3

78

5

Natural Sciences

1

1

32

B. Gunnar Malm

×

46

Publications

1.6K

Citations

22

H-Index

YearCitations

Spin-Torque and Spin-Hall Nano-Oscillators

Tingsu Chen, Randy K. Dumas, Anders Eklund,

Proceedings of the IEEE

2016

374

500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC

Luigia Lanni, B. Gunnar Malm, Mikael Östling,

IEEE Electron Device Letters

2013

91

A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology

Raheleh Hedayati, Luigia Lanni, Saul Rodriguez,

IEEE Electron Device Letters

2014

83

Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC

Luigia Lanni, Reza Ghandi, B. Gunnar Malm,

IEEE Transactions on Electron Devices

2012

64

Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs

Benedetto Buono, Reza Ghandi, Martin Domeij,

IEEE Transactions on Electron Devices

2010

62

Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-/spl kappa/ gate dielectrics and TiN gate

Martin von Haartman, B. Gunnar Malm, Mikael Östling

IEEE Transactions on Electron Devices

2006

54

3D Free‐Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching

Andreas Fischer, Lyubov Belova, Yuri Rikers,

Advanced Functional Materials

2012

49

Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator

J. Seger, Per‐Erik Hellström, Jun Lü,

Applied Physics Letters

2005

43

1/f noise in Si and si/sub 0.7/Ge/sub 0.3/ pMOSFETs

Martin von Haartman, A-C Lindgren, Per Hellström,

IEEE Transactions on Electron Devices

2003

39

Bipolar integrated circuits in SiC for extreme environment operation

Carl‐Mikael Zetterling, Anders Hallén, Raheleh Hedayati,

Semiconductor Science and Technology

2017

37

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