Benedetto Buono - Concepedia

Author

Benedetto Buono

KTH Royal Institute of Technology

Also Known As

B Buono, B. Buono, Benedetto Buono

Publications

444

Citations

H-Index

Concepts

All Affiliations

KTH Royal Institute of Technology Kista Photonics Research Center

About

Benedetto Buono is an author at KTH Royal Institute of Technology specializing in electrical engineering, applied physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	331
2	Applied Physics	8	8	331
3	Electrical Engineering	8	8	331
4	Physics	2	2	89
5	Condensed Matter Physics	1	1	62

Benedetto Buono

Publications

341

Citations

H-Index

Page 1

	Year	Citations
High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension Reza Ghandi, Benedetto Buono, Martin Domeij, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringIon Implantation	2009	68
Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs Benedetto Buono, Reza Ghandi, Martin Domeij, IEEE Transactions on Electron Devices Engineering4H-sic Power BjtsIntegrated CircuitsPower ElectronicsSemiconductor Device	2010	62
Surface-Passivation Effects on the Performance of 4H-SiC BJTs Reza Ghandi, Benedetto Buono, Martin Domeij, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2010	60
Fabrication of 2700-V 12-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ Non Ion-Implanted 4H-SiCBJTs With Common-Emitter Current Gain of 50 Reza Ghandi, Hyung‐Seok Lee, Martin Domeij, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical Engineering\Omega \Cdot \HboxEngineering	2008	39
High-Voltage (2.8 kV) Implantation-Free 4H-SiC BJTs With Long-Term Stability of the Current Gain Reza Ghandi, Benedetto Buono, Martin Domeij, IEEE Transactions on Electron Devices EngineeringLong-term StabilityPower ElectronicsSemiconductor DeviceSemiconductors	2011	31
Influence of Emitter Width and Emitter–Base Distance on the Current Gain in 4H-SiC Power BJTs Benedetto Buono, Reza Ghandi, Martin Domeij, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEmitter Width	2010	27
Conductivity modulated on-axis 4H-SiC 10&#x002B; kV PiN diodes Arash Salemi, Hossein Elahipanah, Benedetto Buono, Semiconductor TechnologyRoom TemperatureElectrical EngineeringEpitaxial GrowthDegradation-free Ultrahigh-voltage	2015	22
Modeling and Characterization of the on-Resistance in 4H-SiC Power BJTs Benedetto Buono, Reza Ghandi, Martin Domeij, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2011	22
Impact of Ionizing Radiation on the $\hbox{SiO}_{2}/ \hbox{SiC}$ Interface in 4H-SiC BJTs Muhammad Usman, Benedetto Buono, Anders Hallén IEEE Transactions on Electron Devices	2012	10

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