Benedetto Buono

High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension

Reza Ghandi, Benedetto Buono, Martin Domeij et al. · IEEE Electron Device Letters · 2009 · 68 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +12

Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs

Benedetto Buono, Reza Ghandi, Martin Domeij et al. · IEEE Transactions on Electron Devices · 2010 · 62 citations

Engineering, 4H-sic Power Bjts, Integrated Circuits +18

Surface-Passivation Effects on the Performance of 4H-SiC BJTs

Reza Ghandi, Benedetto Buono, Martin Domeij et al. · IEEE Transactions on Electron Devices · 2010 · 60 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Fabrication of 2700-V 12-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ Non Ion-Implanted 4H-SiCBJTs With Common-Emitter Current Gain of 50

Reza Ghandi, Hyung‐Seok Lee, Martin Domeij et al. · IEEE Electron Device Letters · 2008 · 39 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

High-Voltage (2.8 kV) Implantation-Free 4H-SiC BJTs With Long-Term Stability of the Current Gain

Reza Ghandi, Benedetto Buono, Martin Domeij et al. · IEEE Transactions on Electron Devices · 2011 · 31 citations

Engineering, Long-term Stability, Power Electronics +16