Reza Ghandi

SiC power devices — Present status, applications and future perspective

Mikael Östling, Reza Ghandi, Carl‐Mikael Zetterling · 2011 · 321 citations

Wide-bandgap Semiconductor, Engineering, Power Devices +17

Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide

Kristina Buchholt, Reza Ghandi, Martin Domeij et al. · Applied Physics Letters · 2011 · 77 citations · Full text

Engineering, P-type 4H-silicon Carbide, Thin Film Process Technology +16

High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension

Reza Ghandi, Benedetto Buono, Martin Domeij et al. · IEEE Electron Device Letters · 2009 · 68 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +12

Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC

Luigia Lanni, Reza Ghandi, B. Gunnar Malm et al. · IEEE Transactions on Electron Devices · 2012 · 64 citations · Full text

Electrical Engineering, Engineering, Power Device +11

Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs

Benedetto Buono, Reza Ghandi, Martin Domeij et al. · IEEE Transactions on Electron Devices · 2010 · 62 citations

Engineering, 4H-sic Power Bjts, Integrated Circuits +18