IEEE Transactions on Electron Devices · 2012 · 64 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsIntegrated Circuit DesignNoise In Analog CircuitsNoise In Electronic DevicesNoise In Semiconductor DevicesWide-bandgap Semiconductor DevicesBipolar Junction Transistor NoiseHigh-temperature ElectronicsIntegrated Circuit NoiseNoise In Bipolar Junction TransistorsNoise In Field-effect TransistorsNoise MarginsSilicon Carbide (Sic) MaterialsVoltage
Operation up to 300 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter-coupled logic is demonstrated. Stable noise margins of about 1 V are reported for a two-input or- nor gate operated on - 15 V supply voltage from 27 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C up to 300 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C. In the same temperature range, an oscillation frequency of about 2 MHz is also reported for a three-stage ring oscillator.
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High Temperature Silicon Carbide CMOS Integrated Circuits
David Clark, Ewan P. Ramsay, A.E. Murphy et al. · Materials science forum · 2011 · 88 citations · Full text