Bipolar integrated circuits in SiC for extreme environment operation

TLDR

SiC integrated circuits are promising for extreme environments, yet challenges remain in contacts, metallization, packaging, and reliability. The study aims to develop process flows, circuit models, and designs that operate across a wide temperature range and to demonstrate increasingly complex mixed‑signal circuits. A bipolar technology was selected to avoid the gate‑dielectric weakness and low‑mobility limitations of SiC MOSFETs. Bipolar ICs achieved higher operating temperatures, improved radiation hardness, and demonstrated both digital and analog circuits from room temperature up to 500 °C.

Abstract

Silicon carbide (SiC) integrated circuits have been suggested for extreme environment operation. The challenge of a new technology is to develop process flow, circuit models and circuit designs for a wide temperature range. A bipolar technology was chosen to avoid the gate dielectric weakness and low mobility drawback of SiC MOSFETs. Higher operation temperatures and better radiation hardness have been demonstrated for bipolar integrated circuits. Both digital and analog circuits have been demonstrated in the range from room temperature to 500 °C. Future steps are to demonstrate some mixed signal circuits of greater complexity. There are remaining challenges in contacting, metallization, packaging and reliability.