Journal of Applied Physics · 2007 · 76 citations · 14 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesCarrier TransportInterface EngineeringMetal-oxide-semiconductor Field-effect TransistorsSemiconductor InterfacesSurface OxidationSurface PhysicsAluminaInterface Trap DensityInterface Trap ReductionInterface TrapsOxidationSemiconductor OxidationSilicon OxidationTraps
This paper demonstrates how sodium enhanced oxidation of Si face 4H-SiC results in removal of near-interface traps at the SiO2∕4H-SiC interface. These detrimental traps have energy levels close to the SiC conduction band edge and are responsible for low electron inversion channel mobilities (1–10cm2∕Vs) in Si face 4H-SiC metal-oxide-semiconductor field effect transistors. The presence of sodium during oxidation increases the oxidation rate and suppresses formation of these near-interface traps resulting in high inversion channel mobility of 150cm2∕Vs in such transistors. Sodium is incorporated by using carrier boats made of sintered alumina during oxidation or by deliberate sodium contamination of the oxide during the formation of the SiC∕SiO2 interface.
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Shallow electron traps at the 4H–SiC/SiO2 interface
V. V. Afanas’ev, A. Stesmans, Gerhard Pensl et al. · Applied Physics Letters · 2000 · 143 citations