Electronics Letters · 1991 · 52 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIii-v SemiconductorsMicrowave Integrated CircuitsMicrowave Semiconductor DevicesSemiconductor Device MaterialsSemiconductor HeterostructuresGaas Microwave Integrated CircuitsMicrowave DevicesMicrowave TransistorsMillimeter-wave TransistorsMonolithic Microwave Integrated CircuitsPower GainSemiconductor Materials For Microwave DevicesWet Etching
The microwave characterisation of GaInP/GaAs HBTs is reported. The structures are grown by LP-MOCVD, and carbon base doping is used. The transistor design is basically multimesas and the devices are obtained using a combination of dry and wet etching. The current and power gain cutoff frequencies of these devices are, respectively, 30 GHz and 45 GHz.