First microwave characterisation of LP-MOCVD grown GaInP/GaAs self-aligned HBT

Abstract

The microwave characterisation of GaInP/GaAs HBTs is reported. The structures are grown by LP-MOCVD, and carbon base doping is used. The transistor design is basically multimesas and the devices are obtained using a combination of dry and wet etching. The current and power gain cutoff frequencies of these devices are, respectively, 30 GHz and 45 GHz.