Raphaël Aubry

Surface potential of n- and p-type GaN measured by Kelvin force microscopy

S. Barbet, Raphaël Aubry, M.A. di Forte-Poisson et al. · Applied Physics Letters · 2008 · 75 citations

Natural Sciences, Materials Engineering, Materials Science +17

Evaluation of Thermal Versus Plasma-Assisted ALD Al<sub>2</sub>O<sub>3</sub> as Passivation for InAlN/AlN/GaN HEMTs

Anna Malmros, Piero Gamarra, Marie‐Antoinette di Forte‐Poisson et al. · IEEE Electron Device Letters · 2015 · 29 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs

O. Lancry, E. Pichonat, Julien Réhault et al. · Solid-State Electronics · 2010 · 24 citations

Natural Sciences, Materials Science, Physics +14

Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach

Alberto Santarelli, Valeria Di Giacomo, Antonio Raffo et al. · International Journal of RF and Microwave Computer-Aided Engineering · 2008 · 24 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Effects of Surface Passivation and Deposition Methods on the 1/<inline-formula> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula> Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

Thanh Ngoc Thi, Anna Malmros, Piero Gamarra et al. · IEEE Electron Device Letters · 2015 · 22 citations

Engineering, Electrical Engineering, Materials Science +17