Marie‐Antoinette di Forte‐Poisson

SThM Temperature Mapping and Nonlinear Thermal Resistance Evolution With Bias on AlGaN/GaN HEMT Devices

Raphal Aubry, Jean-Claude Jacquet, Jonathan Weaver et al. · IEEE Transactions on Electron Devices · 2007 · 91 citations

Engineering, Electrical Engineering, Materials Science +17

Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices

Piero Gamarra, C. Lacam, M. Tordjman et al. · Journal of Crystal Growth · 2014 · 42 citations

Engineering, Materials Engineering, Materials Science +14

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Seghir Boucherit, A. Soltani et al. · Applied Physics Letters · 2012 · 30 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Band offset of GaAs-GaInP heterojunctions

Shipeng Feng, J. Krynicki, V. Donchev et al. · Semiconductor Science and Technology · 1993 · 29 citations

Engineering, Electrical Engineering, Materials Science +17

Evaluation of Thermal Versus Plasma-Assisted ALD Al<sub>2</sub>O<sub>3</sub> as Passivation for InAlN/AlN/GaN HEMTs

Anna Malmros, Piero Gamarra, Marie‐Antoinette di Forte‐Poisson et al. · IEEE Electron Device Letters · 2015 · 29 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17