M. Tordjman

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

N. Sarazin, E. Morvan, M.A. Poisson et al. · IEEE Electron Device Letters · 2009 · 121 citations

Engineering, Electrical Engineering, Materials Science +17

ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT

R. Aubry, J. Jacquet, M. Oualli et al. · IEEE Electron Device Letters · 2016 · 59 citations

Engineering, Electrical Engineering, Materials Science +17

Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

Davide Bisi, Alessandro Chini, F. Soci et al. · IEEE Electron Device Letters · 2015 · 48 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices

Piero Gamarra, C. Lacam, M. Tordjman et al. · Journal of Crystal Growth · 2014 · 42 citations

Engineering, Materials Engineering, Materials Science +14

InAlGaN/GaN HEMTs at Cryogenic Temperatures

Ezgi Dogmus, Riad Kabouche, Sylvie Lépilliet et al. · Electronics · 2016 · 31 citations · Full text

Engineering, Electrical Engineering, Physics +17