Ezgi Dogmus

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub · Applied Physics Express · 2018 · 36 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

GaN-Based Laser Wireless Power Transfer System

Carlo De Santi, Matteo Meneghini, Alessandro Caria et al. · Materials · 2018 · 33 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

InAlGaN/GaN HEMTs at Cryogenic Temperatures

Ezgi Dogmus, Riad Kabouche, Sylvie Lépilliet et al. · Electronics · 2016 · 31 citations · Full text

Engineering, Electrical Engineering, Physics +17

Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH₃‐MBE

S. Rennesson, Mathieu Leroux, Mohamed Al Khalfioui et al. · physica status solidi (a) · 2017 · 19 citations

Engineering, Electrical Engineering, Materials Science +17

Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors

Alessandro Caria, Carlo De Santi, Ezgi Dogmus et al. · Electronics · 2020 · 19 citations · Full text

Engineering, Electrical Engineering, Physics +17