S. Rennesson

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

J. Zúñiga‐Pérez, Vincent Consonni, L. Lymperakis et al. · Applied Physics Reviews · 2016 · 132 citations · Full text

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +16

Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

P. Altuntas, F. Lecourt, Adrien Cutivet et al. · IEEE Electron Device Letters · 2015 · 69 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

Amador Pérez‐Tomás, A. Fontserè, Jordi Llobet et al. · Journal of Applied Physics · 2013 · 66 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

Julien Sellés, Valentin Crépel, I. Roland et al. · Applied Physics Letters · 2016 · 49 citations · Full text

Engineering, Laser Science, Laser Applications +18

Efficient second harmonic generation in low-loss planar GaN waveguides

M. Gromovyi, J. Brault, Aimeric Courville et al. · Optics Express · 2017 · 28 citations · Full text