Vincent Consonni

Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius

Vincent Consonni, M. Knelangen, Lutz Geelhaar et al. · Physical Review B · 2010 · 156 citations

Engineering, Epitaxial Gan Nanowires, Semiconductor Nanostructures +16

Effects of Hexamethylenetetramine on the Nucleation and Radial Growth of ZnO Nanowires by Chemical Bath Deposition

Romain Parize, J. Garnier, Odette Chaix‐Pluchery et al. · The Journal of Physical Chemistry C · 2016 · 147 citations

Engineering, Chemistry, Chemical Engineering +16

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

J. Zúñiga‐Pérez, Vincent Consonni, L. Lymperakis et al. · Applied Physics Reviews · 2016 · 132 citations · Full text

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +16

Polarity in ZnO nanowires: A critical issue for piezotronic and piezoelectric devices

Vincent Consonni, Alex M. Lord · Nano Energy · 2021 · 123 citations · Full text

Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer

Vincent Consonni, Michael Hanke, M. Knelangen et al. · Physical Review B · 2011 · 119 citations

Materials Science, Engineering, Physics +13