M. Knelangen - Concepedia

Author

M. Knelangen

Paul Drude Institute for Solid State Electronics

Also Known As

Knelangen, Matthias, M Knelangen, M. Knelangen, Matthias Knelangen

Publications

586

Citations

H-Index

Concepts

All Affiliations

Paul Drude Institute for Solid State Electronics Laboratoire des Matériaux et du Génie Physique

About

M. Knelangen is an author at Paul Drude Institute for Solid State Electronics specializing in nanotechnology, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	505
2	Applied Physics	6	6	505
3	Materials Science	6	6	505
4	Electrical Engineering	1	1	88
5	Materials Engineering	1	1	49

M. Knelangen

Publications

585

Citations

H-Index

Page 1

	Year	Citations
Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius Vincent Consonni, M. Knelangen, Lutz Geelhaar, Physical Review B EngineeringEpitaxial Gan NanowiresSemiconductor NanostructuresNucleation MechanismsNanoscale Science	2010	156
Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer Vincent Consonni, Michael Hanke, M. Knelangen, Physical Review B Materials ScienceEngineeringPhysicsCrystalline DefectsNanotechnology	2011	119
Effects of nanowire coalescence on their structural and optical properties on a local scale Vincent Consonni, M. Knelangen, U. Jahn, Applied Physics Letters Wide-bandgap SemiconductorEngineeringOptical PropertiesLocal ScaleNanometrology	2009	88
Macro- and micro-strain in GaN nanowires on Si(111) B. Jenichen, O. Brandt, Carsten Pfüller, Nanotechnology	2011	64
Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure Jonas Lähnemann, O. Brandt, Carsten Pfüller, Physical Review B Wide-bandgap SemiconductorEngineeringPiezoelectric PolarizationNanoelectronicsQuantum Materials	2011	49
<i>In situ</i>analysis of strain relaxation during catalyst-free nucleation and growth of GaN nanowires M. Knelangen, Vincent Consonni, A. Trampert, Nanotechnology Materials ScienceMaterials EngineeringStrain Relaxation MechanismsAluminium NitrideNitride Nanowires	2010	49
Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy Vincent Consonni, M. Knelangen, A. Trampert, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorEngineeringPhysicsNanomaterials	2011	44
Monodisperse (In, Ga)N insertions in catalyst-free-grown GaN(0001) nanowires M. Knelangen, M. Hanke, E. Luna, Nanotechnology	2011	16

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