M. Knelangen

Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius

Vincent Consonni, M. Knelangen, Lutz Geelhaar et al. · Physical Review B · 2010 · 156 citations

Engineering, Epitaxial Gan Nanowires, Semiconductor Nanostructures +16

Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer

Vincent Consonni, Michael Hanke, M. Knelangen et al. · Physical Review B · 2011 · 119 citations

Materials Science, Engineering, Physics +13

Effects of nanowire coalescence on their structural and optical properties on a local scale

Vincent Consonni, M. Knelangen, U. Jahn et al. · Applied Physics Letters · 2009 · 88 citations · Full text

Wide-bandgap Semiconductor, Engineering, Optical Properties +21

Macro- and micro-strain in GaN nanowires on Si(111)

B. Jenichen, O. Brandt, Carsten Pfüller et al. · Nanotechnology · 2011 · 64 citations · Full text

Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

Jonas Lähnemann, O. Brandt, Carsten Pfüller et al. · Physical Review B · 2011 · 49 citations · Full text

Wide-bandgap Semiconductor, Engineering, Piezoelectric Polarization +17