A. Trampert - Concepedia

Author

A. Trampert

Paul Drude Institute for Solid State Electronics ORCID

Also Known As

A TRAMPERT, A Trampert, A. TRAMPERT, A. Trampert, A. Trampert †, Achim Trampert, Achim Trampert (1394305), Achim Trampert†, Patrick Vogt, Reuters, Benjamin

496

Publications

12.5K

Citations

H-Index

119

Concepts

All Affiliations

Paul Drude Institute for Solid State Electronics Centre National de la Recherche Scientifique Universidad Politécnica de Madrid Université de Montpellier Forschungsverbund Berlin

About

A. Trampert is an author at Paul Drude Institute for Solid State Electronics specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	49	201	10.2K
2	Applied Physics	49	199	10.1K
3	Natural Sciences	14	20	1.1K
4	Medicine	1	1	42
5	Chemical Biology	1	1	20

A. Trampert

231

Publications

11.4K

Citations

H-Index

Page 1

	Year	Citations
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes Patrick Waltereit, O. Brandt, A. Trampert, Nature SemiconductorsWhite OledElectrical EngineeringSolid-state LightingEngineering	2000	1.7K
X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films Vladimir M. Kaganer, O. Brandt, A. Trampert, Physical Review B Materials ScienceEpitaxial GrowthEngineeringRandom DislocationsCrystalline Defects	2005	213
Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H–SiC(0001) by reactive molecular-beam epitaxy Subhabrata Dhar, O. Brandt, A. Trampert, Applied Physics Letters Magnetic PropertiesEngineeringMagnetic MaterialsMagnetoresistanceN Layers	2003	198
On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy Jelena Ristić, E. Calleja, Sergio Fernández‐Garrido, Journal of Crystal Growth Materials ScienceSpontaneous GrowthEngineeringNanomaterialsNanotechnology	2008	182
Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy L. Cerutti, Jelena Ristić, Sergio Fernández‐Garrido, Applied Physics Letters Materials ScienceSemiconductorsWide-bandgap SemiconductorPhotoluminescenceEngineering	2006	161
Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisks E. Calleja, Jelena Ristić, Sergio Fernández‐Garrido, physica status solidi (b) NanoparticlesEngineeringChemistryNanostructured MaterialsNanoscale Chemistry	2007	157
Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius Vincent Consonni, M. Knelangen, Lutz Geelhaar, Physical Review B EngineeringEpitaxial Gan NanowiresSemiconductor NanostructuresNucleation MechanismsNanoscale Science	2010	156
High resolution transmission electron microscopy studies of the Ag/MgO interface A. Trampert, F. Ernst, C. P. Flynn, Acta Metallurgica et Materialia Materials ScienceMaterial AnalysisEngineeringElectron MicroscopyMicroscopy	1992	152
Metal–Semiconductor Phase‐Transition in WSe<sub>2(1‐</sub><i><sub>x</sub></i><sub>)</sub>Te<sub>2</sub><i><sub>x</sub></i> Monolayer Peng Yu, Junhao Lin, Linfeng Sun, Advanced Materials	2016	148
Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K Subhabrata Dhar, Lucas Pérez, O. Brandt, Physical Review B SemiconductorsMagnetismGd-doped GanSemiconductor TechnologyMagnetic Moment	2005	145

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