F. Lecourt

Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

P. Altuntas, F. Lecourt, Adrien Cutivet et al. · IEEE Electron Device Letters · 2015 · 69 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

10W power amplifier and 3W transmit/receive module with 3 dB NF in Ka band using a 100nm GaN/Si process

Ahmed Gasmi, M. El Kaamouchi, Julien Poulain et al. · 2017 · 66 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +10

6W Ka Band Power Amplifier and 1.2dB NF X-Band Amplifier Using a 100nm GaN/Si Process

Rémy Leblanc, Noelia Santos Ibeas, Ahmed Gasmi et al. · 2016 · 49 citations

Electrical Engineering, Engineering, Rf Semiconductor +11

Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

F. Lecourt, Alain Agboton, N. Ketteniss et al. · IEEE Electron Device Letters · 2013 · 42 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

12W, 30% PAE, 40 GHz power amplifier MMIC using a commercially available GaN/Si process

Joël Moron, Rémy Leblanc, F. Lecourt et al. · 2018 · 42 citations

Electrical Engineering, Gallium Nitride, Transistor Level +11