N. Ketteniss

Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

H. Hahn, Gerrit Lükens, N. Ketteniss et al. · Applied Physics Express · 2011 · 78 citations

Engineering, Electrical Engineering, Materials Science +17

Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates

N. Ketteniss, L. Rahimzadeh Khoshroo, M. Eickelkamp et al. · Semiconductor Science and Technology · 2010 · 66 citations

Engineering, Electrical Engineering, Materials Science +17

Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

F. Lecourt, Alain Agboton, N. Ketteniss et al. · IEEE Electron Device Letters · 2013 · 43 citations

Engineering, Electrical Engineering, Materials Science +17

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

B. Reuters, Ada Wille, N. Ketteniss et al. · Journal of Electronic Materials · 2013 · 42 citations · Full text

Engineering, Electrical Engineering, Materials Science +10

InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

F. Lecourt, N. Ketteniss, H. Behmenburg et al. · IEEE Electron Device Letters · 2011 · 37 citations

Engineering, Electrical Engineering, Materials Science +17