B. Reuters

Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces

B. Reuters, H. Hahn, Alexander Pooth et al. · Journal of Physics D Applied Physics · 2014 · 84 citations

Engineering, Electrical Engineering, Materials Science +17

p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

H. Hahn, B. Reuters, Alexander Pooth et al. · IEEE Transactions on Electron Devices · 2013 · 84 citations

Engineering, Electrical Engineering, Materials Science +15

First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors

H. Hahn, B. Reuters, Simon Kotzea et al. · 2014 · 59 citations

Engineering, Electrical Engineering, Materials Science +17

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

B. Reuters, Ada Wille, N. Ketteniss et al. · Journal of Electronic Materials · 2013 · 42 citations · Full text

Engineering, Electrical Engineering, Materials Science +10

Dielectric function and optical properties of quaternary AlInGaN alloys

E. Sakalauskas, B. Reuters, L. Rahimzadeh Khoshroo et al. · Journal of Applied Physics · 2011 · 37 citations

Natural Sciences, Materials Engineering, Materials Science +17