Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces

Abstract

Novel nitride-based heterostructures have been fabricated demonstrating two-dimensional hole gases as the basis for p-channel transistors. The carrier density in the 2DHG is adjusted between very high values of 2 × 1013 cm−2 and low values of 6 × 1011 cm−2 by the polarization difference, ΔP, between quaternary AlInGaN backbarriers and a GaN channel on top. Record mobilities for holes in GaN of 43 cm2 V−1 s−1 (median 30 cm2 V−1 s−1) are observed for a moderate 2DHG density of 1.3 × 1012 cm−2 (median 2.2 × 1012 cm−2).