Andrei Vescan

12 W/mm AlGaN–GaN HFETs on Silicon Substrates

J. W. Johnson, E. L. Piner, Andrei Vescan et al. · IEEE Electron Device Letters · 2004 · 221 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +9

Current instabilities in GaN-based devices

I. Daumiller, D. Théron, Christophe Gaquière et al. · IEEE Electron Device Letters · 2001 · 150 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substrates

J.D. Brown, R. Borges, E. L. Piner et al. · Solid-State Electronics · 2002 · 114 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +5

Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

R. Stoklas, D. Gregušová, J. Novák et al. · Applied Physics Letters · 2008 · 105 citations

Semiconductors, Algan/gan/si Field-effect Transistors, Electrical Engineering +15

Diamond surface-channel FET structure with 200 V breakdown voltage

P. Gluche, A. Aleksov, Andrei Vescan et al. · IEEE Electron Device Letters · 1997 · 103 citations

Diamond-like Carbon, Electrical Engineering, Engineering +12