Andrei Vescan - Concepedia

Author

Andrei Vescan

RWTH Aachen University ORCID

Also Known As

A Vescan, A. Vescan, Andrei Vescan, Michael Heuken, Vescan, Vescan, A., Vescan, Andrei

262

Publications

4.2K

Citations

H-Index

Concepts

All Affiliations

RWTH Aachen University Aixtron (Germany)Universität Ulm Forschungszentrum Jülich University of Duisburg-Essen

About

Andrei Vescan is an author at RWTH Aachen University specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	34	89	3.3K
2	Applied Physics	34	84	3.2K
3	Chemical Engineering	8	8	137
4	Chemistry	8	8	209
5	Natural Sciences	1	1	16

Andrei Vescan

106

Publications

3.7K

Citations

H-Index

Page 1

	Year	Citations
12 W/mm AlGaN–GaN HFETs on Silicon Substrates J. W. Johnson, E. L. Piner, Andrei Vescan, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesConventional Device DesignsEngineering	2004	221
Current instabilities in GaN-based devices I. Daumiller, D. Théron, Christophe Gaquière, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPhysics	2001	150
AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substrates J.D. Brown, R. Borges, E. L. Piner, Solid-State Electronics Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	2002	114
Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis R. Stoklas, D. Gregušová, J. Novák, Applied Physics Letters SemiconductorsAlgan/gan/si Field-effect TransistorsElectrical EngineeringElectronic DevicesEngineering	2008	105
Diamond surface-channel FET structure with 200 V breakdown voltage P. Gluche, A. Aleksov, Andrei Vescan, IEEE Electron Device Letters Diamond-like CarbonElectrical EngineeringEngineeringRf SemiconductorHigh Voltage Engineering	1997	103
Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS<sub>2</sub> Daniel Schneider, Annika Grundmann, Andreas Bablich, ACS Photonics Optical MaterialsMolybdenum DisulfideResponsive Flexible PhotodetectorsEngineeringTransition Metal Dichalcogenides	2020	87
Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces B. Reuters, H. Hahn, Alexander Pooth, Journal of Physics D Applied Physics Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringNovel Nitride-based Heterostructures	2014	83
Heat-spreading diamond films for GaN-based high-power transistor devices M. Seelmann‐Eggebert, P. Meisen, F. Schaudel, Diamond and Related Materials Heat-spreading Diamond FilmsElectrical EngineeringEngineeringApplied PhysicsGan Power Device	2001	83
p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers H. Hahn, B. Reuters, Alexander Pooth, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringExceptional PerformanceEngineeringP-channel Gan/alingan Hfets	2013	83
Diamond junction FETs based on δ-doped channels A. Aleksov, Andrei Vescan, M. Kunze, Diamond and Related Materials Electrical EngineeringEngineeringDiamond Junction FetsElectronic EngineeringApplied Physics	1999	79

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