AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substrates

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

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High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

S.T. Sheppard, K. Doverspike, W.L. Pribble et al. · IEEE Electron Device Letters · 1999 · 538 citations

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GaN microwave electronics

Umesh K. Mishra, Yifeng Wu, B.P. Keller et al. · IEEE Transactions on Microwave Theory and Techniques · 1998 · 227 citations

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GaN microwave electronics

Umesh K. Mishra, Yifeng Wu, B.P. Keller et al. · 2002 · 203 citations

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High Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance

Yifeng Wu, D. Kapolnek, J. P. Ibbetson et al. · 2003 · 64 citations

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