S.T. Sheppard

30-W/mm GaN HEMTs by Field Plate Optimization

Yifeng Wu, A. Saxler, M. Moore et al. · IEEE Electron Device Letters · 2004 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

S.T. Sheppard, K. Doverspike, W.L. Pribble et al. · IEEE Electron Device Letters · 1999 · 538 citations

Engineering, Electrical Engineering, Materials Science +17

A Type 1 Diabetes Genetic Risk Score Predicts Progression of Islet Autoimmunity and Development of Type 1 Diabetes in Individuals at Risk

María J. Redondo, Susan Geyer, Andrea K. Steck et al. · Diabetes Care · 2018 · 169 citations · Full text

Life Sciences, Endocrinology, Genetics +17

Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiC

G. E. Bulman, K. Doverspike, S.T. Sheppard et al. · Electronics Letters · 1997 · 135 citations

Engineering, Electrical Engineering, Materials Science +16

Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiC

S.T. Sheppard, M. R. Melloch, James A. Cooper · IEEE Transactions on Electron Devices · 1994 · 86 citations

Engineering, Electrical Engineering, Materials Science +15