S.T. Sheppard - Concepedia

Author

S.T. Sheppard

Wolfspeed, Inc. (United States)ORCID

Also Known As

M. Kamboj, S. Sheppard, S. T. Sheppard, S.T Sheppard, S.T. Sheppard, Scott Sheppard, Scott T. Sheppard

Publications

3.8K

Citations

H-Index

Concepts

All Affiliations

Wolfspeed, Inc. (United States)Purdue University West Lafayette Durham University Cree (China)Daimler (Germany)

About

S.T. Sheppard is an author at Wolfspeed, Inc. (United States) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	29	2.4K
2	Electrical Engineering	18	28	2.3K
3	Applied Physics	17	27	2.3K
4	Materials Science	3	3	74
5	Materials Engineering	1	1	14

S.T. Sheppard

Publications

2.6K

Citations

H-Index

Page 1

	Year	Citations
30-W/mm GaN HEMTs by Field Plate Optimization Yifeng Wu, A. Saxler, M. Moore, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringField PlatesRf Semiconductor	2004	1.1K
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates S.T. Sheppard, K. Doverspike, W.L. Pribble, IEEE Electron Device Letters Wide-bandgap SemiconductorRecord PerformanceElectrical EngineeringEngineeringRf Semiconductor	1999	535
Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiC G. E. Bulman, K. Doverspike, S.T. Sheppard, Electronics Letters	1997	135
Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiC S.T. Sheppard, M. R. Melloch, James A. Cooper IEEE Transactions on Electron Devices SemiconductorsFirst Buried-channel MosfetElectrical EngineeringElectronic DevicesEngineering	1994	86
Applications of SiC MESFETs and GaN HEMTs in power amplifier design W.L. Pribble, John W. Palmour, S.T. Sheppard, Wide-bandgap SemiconductorElectrical EngineeringEngineeringGan HemtsPower Device	2003	82
Wide bandgap semiconductor devices and MMICs for RF power applications John W. Palmour, S.T. Sheppard, R.P. Smith, EngineeringRadio FrequencyHigh Power DensitiesPower ElectronicsRf Semiconductor	2002	79
Gain characteristics of InGaN/GaN quantum well diode lasers Y.-K. Song, Martin Kuball, A. V. Nurmikko, Applied Physics Letters Moderate Current DensityPhotonicsEngineeringPhysicsSemiconductor Lasers	1998	60
SiC and GaN Wide Bandgap Device Technology Overview J. Milligan, S.T. Sheppard, W.L. Pribble, Proceedings of the IEEE National Radar Conference Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsSic Mesfets	2007	42
Nonequilibrium characteristics of the gate-controlled diode in 6H-SiC S.T. Sheppard, James A. Cooper, M. R. Melloch Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesN+-p Gate-controlled Diodes	1994	36
Improved X-Band Performance and Reliability of a GaN HEMT With Sunken Source Connected Field Plate Design Kyle M. Bothe, Satyaki Ganguly, Jia Guo, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringGan HemtEngineeringX-band Performance	2022	36

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