IEEE Transactions on Electron Devices · 1994 · 86 citations · 20 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDevice CharacterizationMetal-oxide-semiconductor Field-effect TransistorsMos CapacitorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBuried Channel DevicesElectron MobilityIon Implantation EffectsSilicon Carbide (Sic) MaterialsSurface StatesThermal Oxidation
Inversion-channel and buried-channel gate-controlled diodes and MOSFET's are investigated in the wide bandgap semiconductor 6H-SiC. These devices are fabricated using thermal oxidation and ion implantation. The gate-controlled diodes allow room temperature measurement of surface states, which is difficult with MOS capacitors due to the 3 eV bandgap of 6H-SiC. An effective electron mobility of 20 cm/sup 2//Vs is measured for the inversion-channel devices and a bulk electron mobility of 180 cm/sup 2//Vs is found in the channel of the buried-channel MOSFET. The buried-channel transistor is the first ion-implanted channel device in SIC and the first buried-channel MOSFET in the 6H-SiC polytype.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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