K. Doverspike - Concepedia

Author

K. Doverspike

United States Naval Research Laboratory

Also Known As

K. DOVERSPIKE, K. Doverspike, Kathleen Doverspike

Publications

3.2K

Citations

H-Index

Concepts

All Affiliations

United States Naval Research Laboratory Wolfspeed, Inc. (United States)Brown University Carnegie Mellon University Hewlett-Packard (United States)

About

K. Doverspike is an author at United States Naval Research Laboratory specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	27	2.8K
2	Applied Physics	21	26	2.7K
3	Chemistry	4	4	419
4	Natural Sciences	2	2	353
5	Chemical Engineering	2	2	87

K. Doverspike

Publications

3.1K

Citations

H-Index

Page 1

	Year	Citations
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates S.T. Sheppard, K. Doverspike, W.L. Pribble, IEEE Electron Device Letters Wide-bandgap SemiconductorRecord PerformanceElectrical EngineeringEngineeringRf Semiconductor	1999	535
Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition E. R. Glaser, T. A. Kennedy, K. Doverspike, Physical review. B, Condensed matter Wide-bandgap SemiconductorOptical MaterialsEngineeringMagnetic ResonanceUndoped Gan Films	1995	327
Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy Weijin Qian, Marek Skowroński, Marc De Graef, Applied Physics Letters Materials ScienceAluminium NitrideWide-bandgap SemiconductorEngineeringCrystalline Defects	1995	284
Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy Weijin Qian, Gregory S. Rohrer, Marek Skowroński, Applied Physics Letters Wide-bandgap SemiconductorEngineeringForce MicroscopyScrew DislocationsOpen-core Dislocation	1995	215
Microwave performance of GaN MESFETs S.C. Binari, L.B. Rowland, W. Kruppa, Electronics Letters Wide-bandgap SemiconductorElectrical EngineeringMicrowave PerformanceEngineeringRf Semiconductor	1994	153
GaN FETs for microwave and high-temperature applications Steven C. Binari, K. Doverspike, G. Kelner, Solid-State Electronics Electrical EngineeringEngineeringApplied PhysicsGan Power DeviceGan Fets	1997	144
H, He, and N implant isolation of n-type GaN S.C. Binari, H.B. Dietrich, G. Kelner, Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringH ImplantationHigh Temperature Materials	1995	138
Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiC G. E. Bulman, K. Doverspike, S.T. Sheppard, Electronics Letters	1997	135
The growth and properties of Al and AlN films on GaN(0001)–(1×1) V. M. Bermudez, T. Jung, K. Doverspike, Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringGa. AnnealingEngineering	1996	134
Electrical characterisation of Ti Schottky barrierson <i>n</i> -type GaN S.C. Binari, H.B. Dietrich, G. Kelner, Electronics Letters	1994	114

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