S.C. Binari

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

S.C. Binari, K. Ikossi, J.A. Roussos et al. · IEEE Transactions on Electron Devices · 2001 · 638 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Trapping effects in GaN and SiC microwave FETs

S.C. Binari, P. B. Klein, T.E. Kazior · Proceedings of the IEEE · 2002 · 454 citations

Engineering, Electrical Engineering, Materials Science +17

Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

P. B. Klein, S.C. Binari, K. Ikossi et al. · Applied Physics Letters · 2001 · 279 citations

Engineering, Materials Engineering, Materials Science +17

Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors

P. B. Klein, Jaime A. Freitas, S.C. Binari et al. · Applied Physics Letters · 1999 · 189 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/GaN HEMTs grown on SiC substrates

S.C. Binari, Joan M. Redwing, G. Kelner et al. · Electronics Letters · 1997 · 161 citations

Engineering, Electrical Engineering, Materials Science +17