J.A. Roussos - Concepedia

Author

J.A. Roussos

Also Known As

J. A. Roussos, J. ROUSSOS, J. Roussos, J.A Roussos, J.A. Roussos, Jason A Roussos, Jason A. Roussos, Jason Roussos, Roussos, Jason A.

Publications

1.6K

Citations

H-Index

Concepts

All Affiliations

United States Naval Research Laboratory Kyma Technologies (United States)Naval Research Laboratory Electronics Science and Technology Division University of Maryland, Baltimore County The Ohio State University

About

J.A. Roussos is an author at United States Naval Research Laboratory specializing in applied physics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	21	1.4K
2	Applied Physics	17	21	1.4K
3	Electrical Engineering	17	21	1.4K
4	Materials Engineering	4	4	129
5	Education	1	1	15

J.A. Roussos

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Trapping effects and microwave power performance in AlGaN/GaN HEMTs S.C. Binari, K. Ikossi, J.A. Roussos, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorGate Lag	2001	632
Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation Andrew Edwards, J. Mittereder, S.C. Binari, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringAlgan-gan HemtsRf Semiconductor	2005	130
Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress J. Mittereder, S.C. Binari, P. B. Klein, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringBias StressEngineeringPhotoionization Spectroscopy	2003	77
<inline-formula> <tex-math notation="TeX">${\rm SiN}_{x}$ </tex-math></inline-formula>/InAlN/AlN/GaN MIS-HEMTs With 10.8 <inline-formula> <tex-math notation="TeX">${\rm THz}\cdot{\rm V}$ </tex-math></inline-formula> Johnson Figure of Merit Brian P. Downey, David J. Meyer, D. S. Katzer, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic Devices\Rm Sin	2014	73
Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates Kelson D. Chabak, J. Gillespie, V. Miller, IEEE Electron Device Letters Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringCvd Diamond Substrates	2009	67
High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates David J. Meyer, David A. Deen, David F. Storm, IEEE Electron Device Letters SemiconductorsOxide HeterostructuresElectrical EngineeringWide-bandgap SemiconductorGan Substrates	2013	57
Ion induced charge collection in GaAs MESFETs A.B. Campbell, A.R. Knudson, Dale McMorrow, IEEE Transactions on Nuclear Science Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringNuclear Physics	1989	56
X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors Shahadat H. Sohel, Andy Xie, Edward Beam, IEEE Electron Device Letters Electrical EngineeringElectronic DevicesEngineeringSemiconductor DeviceNanoelectronics	2018	50
AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization David F. Storm, D. S. Katzer, J.A. Roussos, Journal of Crystal Growth Wide-bandgap SemiconductorElectrical EngineeringEngineeringMbe GrowthApplied Physics	2007	44
Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors David J. Meyer, Andrew D. Koehler, Karl D. Hobart, IEEE Electron Device Letters Split-wafer StudyWide-bandgap SemiconductorElectrical EngineeringEngineeringRf Semiconductor	2014	37

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