J.A. Roussos

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

S.C. Binari, K. Ikossi, J.A. Roussos et al. · IEEE Transactions on Electron Devices · 2001 · 632 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation

Andrew Edwards, J. Mittereder, S.C. Binari et al. · IEEE Electron Device Letters · 2005 · 130 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

J. Mittereder, S.C. Binari, P. B. Klein et al. · Applied Physics Letters · 2003 · 77 citations

Wide-bandgap Semiconductor, Electrical Engineering, Bias Stress +12

<inline-formula> <tex-math notation="TeX">${\rm SiN}_{x}$ </tex-math></inline-formula>/InAlN/AlN/GaN MIS-HEMTs With 10.8 <inline-formula> <tex-math notation="TeX">${\rm THz}\cdot{\rm V}$ </tex-math></inline-formula> Johnson Figure of Merit

Brian P. Downey, David J. Meyer, D. S. Katzer et al. · IEEE Electron Device Letters · 2014 · 73 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates

Kelson D. Chabak, J. Gillespie, V. Miller et al. · IEEE Electron Device Letters · 2009 · 67 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +12